 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SPICE Device Model SI8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V (D-S) MOSFET CHARACTERISTICS * P-Channel Vertical DMOS * Macro Model (Subcircuit Model) * Level 3 MOS * Apply for both Linear and Switching Application * Accurate over the -55 to 125C Temperature Range * Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit mode is extracted and optimized over the -55 to 125C temperature ranges under the pulsed 0-to-5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 72950 19-Apr-04 www.vishay.com 1 SPICE Device Model SI8901EDB Vishay Siliconix SPECIFICATIONS (TJ = 25C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current b Symbol Test Conditions Simulated Data 0.49 42 0.046 0.060 0.075 6.2 Measured Data Unit VGS(th) ID(on) VSS = VGS, ID = - 250A VSS = - 5V, VGS = - 4.5V VGS = - 4.5V, ISS = - 1A V A 0.048 0.062 0.081 7 S Drain-Source On-State Resistanceb rDS(on) VGS = - 2.5V, ISS = - 1A VGS = - 1.8V, ISS = - 1A Forward Transconductanceb gfs VSS = -10V, ISS = - 1A Dynamic Rise Time a Turn-On Delay Time td(on) tr td(off) tf VSS = - 10V, RL = 10 ISS - 1A, VGEN = - 4.5V, RG = 6 2 2 2.1 7 2.3 2.2 1.3 9 s Turn-Off Delay Time Fall Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2%. www.vishay.com 2 Document Number: 72950 19-Apr-04 SPICE Device Model SI8901EDB Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25C UNLESS OTHERWISE NOTED) Document Number: 72950 19-Apr-04 www.vishay.com 3 |
Price & Availability of SI8901EDB
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |